Critical chamber component surface improvement to reduce chamber particles

摘要

Embodiments described herein generally relate to apparatus and methods for thermally treating chamber components for use in ultraviolet semiconductor processing chambers. Thermal treatment of chamber components comprising unitary ceramic or glass articles may reduce the probability of particle generation when the chamber components are exposed to corrosive environments, such as exposure to ultraviolet light and ozone/oxygen radicals. A method of thermally treating chamber components includes heating the unitary article at an acceptable ramp rate to a desired temperature for a desired time period and subsequently cooling the unitary article at the ramping rate.

主权项

1. A method for thermally treating UV chamber components, comprising:
providing a unitary ceramic article; heating the unitary ceramic article to a temperature range between about 1000° C. and about 1800° C. at a first ramping rate of between about 0.1° C./minute and about 20° C./minute; thermally treating the unitary ceramic article for a duration of between about 0.5 hours and about 24 hours; and cooling the unitary ceramic article at a second ramping rate of between about 0.1° C./minute and about 20° C./minute.