SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, OR DISPLAY DEVICE INCLUDING THE SAME

摘要

To suppress a change in electrical characteristics in a transistor including an oxide semiconductor film. The transistor includes a first gate electrode, a first insulating film, an oxide semiconductor film, a source electrode, a drain electrode, a second insulating film, a second gate electrode, and a third insulating film. The oxide semiconductor film includes a first oxide semiconductor film on the first gate electrode side, and a second oxide semiconductor film over the first oxide semiconductor film. The first oxide semiconductor film and the second oxide semiconductor film include In, M, and Zn (M is Al, Ga, Y, or Sn). In a region of the second oxide semiconductor film, the number of atoms of In is smaller than that in the first oxide semiconductor film. The second gate electrode includes at least one metal element included in the oxide semiconductor film.

主权项

1. A semiconductor device comprising:
a transistor including:
a first gate electrode;a first insulating film over the first gate electrode;an oxide semiconductor film over the first insulating film;a source electrode electrically connected to the oxide semiconductor film;a drain electrode electrically connected to the oxide semiconductor film;a second insulating film over the oxide semiconductor film;a second gate electrode over the second insulating film; anda third insulating film over the second gate electrode, wherein the oxide semiconductor film includes a first oxide semiconductor film on the first gate electrode side, and a second oxide semiconductor film over the first oxide semiconductor film, wherein the first oxide semiconductor film and the second oxide semiconductor film include In, M, and Zn, wherein M is Al, Ga, Y, or Sn, wherein, in a region of the second oxide semiconductor film, the number of atoms of the In is smaller than that in the first oxide semiconductor film, and wherein the second gate electrode includes at least one metal element included in the oxide semiconductor film.