TRANSISTOR, METHOD FOR MANUFACTURING TRANSISTOR, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE

摘要

A transistor with favorable electrical characteristics, a transistor with stable electrical characteristics, or a highly integrated semiconductor device is provided. In a top-gate transistor in which an oxide semiconductor is used for a semiconductor layer where a channel is formed, elements are introduced to the semiconductor layer in a self-aligned manner after a gate electrode is formed. After that, a side surface of the gate electrode is covered with a structure body. The structure body preferably contains silicon oxide. A first insulating layer is formed to cover the semiconductor layer, the gate electrode, and the structure body. A second insulating layer is formed by a sputtering method over the first insulating layer. Oxygen is introduced to the first insulating layer when the second insulating layer is formed.

主权项

1. A transistor comprising:
a first oxide layer; a second oxide layer comprising a first region, a second region, a third region, a fourth region, and a fifth region; a third oxide layer; an insulating layer; a first electrode; a second electrode; a third electrode; and a structure body, wherein the first oxide layer is in contact with the second oxide layer, wherein the second oxide layer is in contact with the third oxide layer, wherein the first region, and the second oxide layer, and the third oxide layer overlap with one another, wherein the first electrode is over the first region with the insulating layer interposed between the first electrode and the first region, wherein the structure body is positioned over the second oxide layer to cover a side surface of the first electrode, wherein the second region and the first electrode overlap with each other, wherein the third region and the structure body overlap with each other, wherein the fourth region is in contact with the second electrode, wherein the fifth region is in contact with the third electrode, wherein the second oxide layer is an oxide semiconductor, and wherein the third region, the fourth region, and the fifth region each contain an element different from an element contained in the second region.