MANUFACTURE METHOD OF TFT SUBSTRATE AND STURCTURE THEREOF

摘要

The present invention provides a manufacture method of an oxide semiconductor TFT substrate, and the method comprises steps of: 1, forming a gate (3) and a first heavily doped transparent conducting thin film layer (2) on a substrate (1); 2, deposing a gate isolation layer (4); 3, forming an island shaped oxide semiconductor layer (5); 4, forming an island shaped photoresistor layer (6); 5, forming a source/a drain (8), and a second, a third heavily doped transparent conducting thin film layer (7, 9), and the source/the drain (8) contact the two side parts (53) of the island shaped oxide semiconductor layer (5) via the second heavily doped transparent conducting thin film layer (7) to establish electrical connections; 6, deposing and patterning a protecting layer (10); 7, deposing and patterning a pixel electrode layer (11) which contacts the source/the drain (8) via the third heavily doped transparent conducting thin film layer (9) to establish electrical connections; 8, implementing anneal process.

主权项

1. A manufacture method of an oxide semiconductor TFT substrate, comprising steps of:
step 1, providing a substrate, and sequentially deposing and patterning a first heavily doped transparent conducting thin film layer and a first metal layer on the substrate to form a gate and the first heavily doped transparent conducting thin film layer located at a lower surface of the gate with the same shape of the gate; step 2, deposing a gate isolation layer on the gate and the substrate; step 3, deposing and patterning an oxide semiconductor layer on the gate isolation layer to form an island shaped oxide semiconductor layer directly over the gate; step 4, deposing and patterning an etching stopper layer on the island shaped oxide semiconductor layer and the gate isolation layer to form an island shaped etching stopper layer on the island shaped oxide semiconductor layer; a width of the island shaped etching stopper layer is smaller than a width of the island shaped oxide semiconductor layer; the island shaped etching stopper layer covers a central part of the island shaped oxide semiconductor layer and exposes two side parts of the island shaped oxide semiconductor layer; step 5, sequentially deposing and patterning a second heavily doped transparent conducting thin film layer, a second metal layer and a third heavily doped transparent conducting thin film layer on the island shaped etching stopper layer and the gate isolation layer to form a source/a drain, the second heavily doped transparent conducting thin film layer located at a lower surface of the source/the drain with the same shape of the source/the drain and the third heavily doped transparent conducting thin film layer located at an upper surface of the source/the drain with the same shape of the source/the drain; the source/the drain contact the two side parts of the island shaped oxide semiconductor layer via the second heavily doped transparent conducting thin film layer to establish electrical connections; step 6, deposing and patterning a protecting layer on the third heavily doped transparent conducting thin film layer and the etching stopper layer to form a via located at one side of the island shaped oxide semiconductor layer; step 7, deposing and patterning a pixel electrode layer on the protecting layer; the pixel electrode layer fills the via and contacts the source/the drain via the third heavily doped transparent conducting thin film layer to establish electrical connections; step 8, implementing anneal process to the substrate obtained in the seventh step.