| 发明名称 |
NONVOLATILE SEMICONDUCTOR MEMORY DEVICE |
| 摘要 |
According to one embodiment, a nonvolatile semiconductor memory device comprises a memory cell array including a first selection gate, word lines and a second selection gate stacked above a semiconductor substrate, and a memory pillar disposed through the first selection gate, word lines and second selection gate, a hookup region disposed adjacent to the memory cell array region in a first direction, and a dummy region disposed outside the memory cell array region and the hookup region, the dummy region including dummy word lines, each provided at the same layer as the associated word line. |
| 申请公布号 |
US2016260722(A1) |
申请公布日期 |
2016.09.08 |
| 申请号 |
US201514842972 |
申请日期 |
2015.09.02 |
| 申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
BABA Yasuyuki;KOMENAKA Kazuichi;INOUE Hirofumi |
| 分类号 |
H01L27/115 |
主分类号 |
H01L27/115 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A nonvolatile semiconductor memory device comprising:
a memory cell array region including a first selection gate, word lines and a second selection gate stacked above a semiconductor substrate, and a memory pillar disposed through the first selection gate, word lines and second selection gate; a hookup region disposed adjacent to the memory cell array region in a first direction; and a dummy region disposed outside the memory cell array region and the hookup region, the dummy region including dummy word lines, each provided at the same layer as the associated word line. |
| 地址 |
Minato-ku JP |
