| 摘要 |
A semiconductor device according to an embodiment includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type in contact with the first semiconductor region, a third semiconductor region of the first conductivity type in contact with the second semiconductor region and spaced from the first semiconductor region, a first insulating film provided between the first semiconductor region and the third semiconductor region on the second semiconductor region, a first electrode provided on the first insulating film, a high-pass filter connected between the first semiconductor region and the third semiconductor region, and a low-pass filter connected between the second semiconductor region and the third semiconductor region. |
