| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid state image pickup device manufacturing method which can reduce dark current.SOLUTION: According to one embodiment, a solid state image pickup device manufacturing method is provided. A solid state image pickup device manufacturing method according to the embodiment comprises the steps of; forming a photoelectric conversion element in a semiconductor layer; forming a fixed charge film for holding negative fixed charge on a light receiving side of the photoelectric conversion element; and performing hydrogen plasma treatment to form a dangling bond on the fixed charge film. By doing this, an electron trap effect in the fixed charge film is increased by increasing the amount of hydrogen bonding in the fixed charge film thereby to increase negative fixed charge in the fixed charge film.SELECTED DRAWING: Figure 6 |
