| 发明名称 |
Semiconductor Device and Method Fabricating the Same |
| 摘要 |
According to an exemplary embodiment, a semiconductor device is provided. The semiconductor device includes a first seal ring and a first circuit. The first circuit includes a first capacitor and a first inductor connected in series. The first circuit is connected between the first seal ring and a ground. |
| 申请公布号 |
US2016307841(A1) |
申请公布日期 |
2016.10.20 |
| 申请号 |
US201615198338 |
申请日期 |
2016.06.30 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company Limited |
发明人 |
LEE HSIAO-CHUN;HUANG CHI-FENG;LIANG VICTOR CHIANG |
| 分类号 |
H01L23/522;H01L23/58;H01L23/66 |
主分类号 |
H01L23/522 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a main circuit that includes a source of noise; an assembly isolation region that surrounds the main circuit; a noise-absorbing circuit that includes a capacitor and an inductor that are (i) connected in series and (ii) selected based on a frequency band of the noise; and a seal ring that surrounds the assembly isolation region and to which the noise-absorbing circuit is connected. |
| 地址 |
Hsinchu TW |
