RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING NOVOLAC POLYMER HAVING SECONDARY AMINO GROUP

摘要

A resist underlayer film which has an excellent hard mask function and can form an excellent pattern shape. A resist underlayer film-forming composition to be used for a lithography process, including a novolac polymer obtained by reaction of an aldehyde compound and an aromatic compound having a secondary amino group. The novolac polymer contains a unit structure of Formula (1):;;A method for producing a semiconductor device, including the steps of: forming a resist underlayer film from the resist underlayer film-forming composition on a semiconductor substrate; forming a hard mask on the resist underlayer film; further forming a resist film on the hard mask; forming a resist pattern by irradiation with light or an electron beam and development; etching the hard mask by using the formed resist pattern; etching the resist underlayer film by using the patterned hard mask; and processing the semiconductor substrate by using the patterned underlayer film.

主权项

1. A resist underlayer film-forming composition to be used for a lithography process, the resist underlayer film-forming composition comprising a novolac polymer obtained by a reaction of an aldehyde compound and an aromatic compound having a secondary amino group.