发明名称 | Pixel structure | ||
摘要 | A pixel structure includes a patterned insulating layer and a patterned electrode layer. The patterned insulating layer includes a first area and a second area, and the patterned electrode layer includes a third layer and a fourth layer. The first area has a plurality of bar-shaped structures, the third area is a block electrode, and the fourth area is composed of a plurality of first bar-shaped electrodes. The third area is disposed opposite to the first area such that the third area is protruded according to the bar-shaped structures thereby forming a plurality of second bar-shaped electrodes. The fourth area is disposed opposite to the second area such that the first bar-shaped electrodes are formed on the second area. | ||
申请公布号 | US9519187(B2) | 申请公布日期 | 2016.12.13 |
申请号 | US201414287711 | 申请日期 | 2014.05.27 |
申请人 | AU OPTRONICS CORPORATION | 发明人 | Yeh Chao-Wei;Ting Tien-Lun;Hsu Wen-Hao |
分类号 | G02F1/1343;G02F1/1337;G02F1/139 | 主分类号 | G02F1/1343 |
代理机构 | WPAT, PC | 代理人 | WPAT, PC ;King Justin |
主权项 | 1. A pixel structure, comprising: a patterned insulating layer, comprising a first area and a second area, wherein the first area has a plurality of bar-shaped structures; and a patterned electrode layer, comprising a third area and a fourth area, wherein the third area is a block electrode, and the fourth area is composed of a plurality of first bar-shaped electrodes, wherein the third area is disposed opposite to the first area such that the patterned electrode layer covers the patterned insulating layer in the first area and the bar-shaped structures elevate the patterned electrode layer, thereby forming a plurality of second bar-shaped electrodes; and the fourth area is disposed opposite to the second area such that the first bar-shaped electrodes are formed on the second area. | ||
地址 | Hsin-Chu TW |