| 摘要 |
A miniaturized electronic imaging chip has stratified layers wherein a base silicon layer has a peripheral edge defining an area and a thickness which allows passage therethrough of most UV, visible and IR light. A pixel layer is formed on the back side of this first silicon layer. At least one interconnect layer is bonded to the pixel layer. Electric leads are bump bonded to the bonding pads on the outermost interconnect layer and extend away from it within the area for attachment to means for sensing electrical signals generated by an image projected onto the pixel layer through the silicon layer. Preferably, the leads are perpendicular to the chip. A unique method of manufacturing the miniaturized electronic imaging chip from a standard CCD, having a peripheral edge defining a first area, comprises the steps of shaving a silicon substrate, having a peripheral edge defining a second area which is smaller than the first area, on the back side of the standard CCD to a thickness which allows passage of a light image therethrough. The CCD then is reversed so that the image is projected through the thinner back side of the silicon substrate. Leads are bumped bonded to the former front surface of the CCD within the smaller second area for supplying electrical signals to and from the CCD.
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