| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which a pad electrode of a semiconductor chip to be buried in an insulated layer can be connected to an upper wiring on a fine wiring in the semiconductor device of a SiP mode in which the semiconductor chip is buried in the insulated film, and to provide a manufacturing method thereof. <P>SOLUTION: The semiconductor device is packaged so as to include a semiconductor provided with an electronic circuit. In this device, semiconductor chips (1a, 1b) having semiconductor bodies (10a, 10b) each having an electronic circuit formed thereon, pad electrodes (11a, 11b) each formed on the semiconductor bodies and projection electrodes (16a, 16b) connected to the pad electrodes and formed so as to project from the surface of the semiconductor bodies are mounted on a substrate 20 from the rear surface side of the forming surface of the projection electrodes. A semiconductor chip is buried to form an insulation layer 22, and the insulated layer is flattened and ground from the top surface to a height where the apex of the projection electrodes are exposed. <P>COPYRIGHT: (C)2007,JPO&INPIT |
