发明名称 SEMICONDUCTOR CHIP WITH AMORPHOUS CRACK-STOP LAYER
摘要 A semiconductor chip (19; 20; 21; 22) comprises a crystalline layer (31; 32; 32'; 32'') of semiconductor material having an active surface (27; 28; 28'; 28'') and a passive surface (29; 30; 30'; 30''). The active surface (27; 28; 28'; 28'') com-prises embedded electrical circuits and contact regions (23; 24; 24'; 24'') for contacting the electrical circuits. One or more amorphous layers (25; 26; 26'; 26'') of semiconductor material or of semiconductor oxide material are provided on the passive surface (29; 30; 30'; 30'').
申请公布号 WO2007049087(A1) 申请公布日期 2007.05.03
申请号 WO2005IB03159 申请日期 2005.10.24
申请人 INFINEON TECHNOLOGIES AG;CHAN, KAI, CHONG;TEO, MARY;SOH, CHOEW, KHENG 发明人 CHAN, KAI, CHONG;TEO, MARY;SOH, CHOEW, KHENG
分类号 H01L23/00;H01L21/314;H01L23/29 主分类号 H01L23/00
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