| 摘要 |
A semiconductor device having improved ESD characteristic is provided to improve a pressure resistance characteristic against static electricity by dispersing a concentration of load to a connection part of a protection device. A diode region(10) has plural protection diodes for electrostatic discharge. A pad region is overlapped with an upper part of the diode region, and has a pad installed to an external connection terminal. A contact plug unit connects at least one of active regions(62) constituting the diode region with the pad within the diode region. The contact plug unit has a via contact part electrically connecting an upper metal layer with a lower metal layer, and a metal contact part electrically connecting he lower metal layer with the active region. |
