发明名称 INSULATING FILM AND SEMICONDUCTOR DEVICE USING THIS FILM
摘要 An insulating film includes a first metal, oxygen, fluorine and one of a second metal or nitrogen, and satisfies {kx[X]-[F]}/2<=8.4 atomic %, wherein the fluorine amount [F], the one element amount [X], and a valence number difference k between the first and second metals or between oxygen and nitrogen.
申请公布号 US2008067636(A1) 申请公布日期 2008.03.20
申请号 US20070689301 申请日期 2007.03.21
申请人 SHIMIZU TATSUO;KOYAMA MASATO 发明人 SHIMIZU TATSUO;KOYAMA MASATO
分类号 H01L23/58;B22D15/00 主分类号 H01L23/58
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