发明名称 Electron beam exposure apparatus and method for cleaning the same
摘要 Provided is an electron beam exposure apparatus for forming a desired pattern on a sample mounted on a wafer stage by exposure with an electron beam generated form an electron gun. The electron beam exposure apparatus includes: supplying device of injecting a reducing gas into a column in which the electron gun and the wafer stage are housed; and control unit of performing control so that the injection of the reducing gas into the column is continued for a predetermined period of time. Organic contamination is combined with H generated from the reducing gas by irradiation of an electron beam, and then evaporates. Further included is supplying device of injecting an ozone gas into the column. The control unit may perform control so that the injection of the ozone gas into the column in addition to the injection of the reducing gas is continued for a predetermined period of time.
申请公布号 US2008169433(A1) 申请公布日期 2008.07.17
申请号 US20080077153 申请日期 2008.03.17
申请人 YASUDA HIROSHI;OOAE YOSHIHISA 发明人 YASUDA HIROSHI;OOAE YOSHIHISA
分类号 A61N5/00 主分类号 A61N5/00
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