发明名称 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To restore data using a method different from a conventional method. <P>SOLUTION: A nonvolatile semiconductor memory device includes a memory section comprising a memory cell array in which nonvolatile memory cells are disposed in matrix and having a binary data storage region for storing binary data with single threshold for data identification and a multi-valued data storage region for storing multi-valued data with multiple thresholds for data identification, and a memory controller controlling the memory section. When writing multi-valued data into the multi-valued data storage region, the memory controller also writes data of a low-order page of the multi-valued data into the binary data region. <P>COPYRIGHT: (C)2009,JPO&INPIT</p>
申请公布号 JP2009048750(A) 申请公布日期 2009.03.05
申请号 JP20070216716 申请日期 2007.08.23
申请人 TOSHIBA CORP 发明人 YOKOZUKA KENJI;TAKAGI YASUHARU
分类号 G11C16/02;G06F12/16;G11C16/04 主分类号 G11C16/02
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