发明名称 |
SUPPORTING GLASS SUBSTRATE AND MANUFACTURING METHOD THEREFOR |
摘要 |
[Problem] To contribute to the densification of semiconductor packages by providing: a supporting glass substrate suitable for supporting a processed substrate used in high-density wiring; and a manufacturing method for said substrate. [Solution] A supporting glass substrate of the present invention is characterized in that when said substrate is raised from room temperature to 400°C at a rate of 5°C/minute, kept at 400°C for 5 hours, and returned to room temperature at a rate of 5°C/minute, the thermal shrinkage is 20 ppm or less. |
申请公布号 |
WO2016111152(A1) |
申请公布日期 |
2016.07.14 |
申请号 |
WO2015JP85638 |
申请日期 |
2015.12.21 |
申请人 |
NIPPON ELECTRIC GLASS CO., LTD. |
发明人 |
KATAYAMA HIROKI |
分类号 |
C03B29/06;C03B17/06;C03C19/00 |
主分类号 |
C03B29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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