发明名称 SUPPORTING GLASS SUBSTRATE AND MANUFACTURING METHOD THEREFOR
摘要 [Problem] To contribute to the densification of semiconductor packages by providing: a supporting glass substrate suitable for supporting a processed substrate used in high-density wiring; and a manufacturing method for said substrate. [Solution] A supporting glass substrate of the present invention is characterized in that when said substrate is raised from room temperature to 400°C at a rate of 5°C/minute, kept at 400°C for 5 hours, and returned to room temperature at a rate of 5°C/minute, the thermal shrinkage is 20 ppm or less.
申请公布号 WO2016111152(A1) 申请公布日期 2016.07.14
申请号 WO2015JP85638 申请日期 2015.12.21
申请人 NIPPON ELECTRIC GLASS CO., LTD. 发明人 KATAYAMA HIROKI
分类号 C03B29/06;C03B17/06;C03C19/00 主分类号 C03B29/06
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