Thermally Tuning Strain in Semiconductor Devices

摘要

A method includes performing a first epitaxy to grow a silicon germanium layer over a semiconductor substrate, performing a second epitaxy to grow a silicon layer over the silicon germanium layer, and performing a first oxidation to oxidize the silicon germanium layer, wherein first silicon germanium oxide regions are generated. A strain releasing operation is performed to release a strain caused by the first silicon germanium oxide regions. A gate dielectric is formed on a top surface and a sidewall of the silicon layer. A gate electrode is formed over the gate dielectric.

主权项

1. A device comprising:
a substrate; a silicon-containing oxide region over the substrate, with pores distributed in the silicon-containing oxide region; a silicon region overlying the silicon-containing oxide region; a gate dielectric on a top surface and a sidewall of the silicon region; and a gate electrode over the gate dielectric.