RF POWER TRANSISTOR

摘要

A radio frequency (RF) power transistor includes a semiconductor heterostructure, a gate electrode, a drain electrode and a source electrode. The drain electrode includes an ohmic contact and a Schottky contact extending from the ohmic contact toward the gate electrode, spaced apart from the gate electrode (4) by a distance (LGD), and having a length (LEXT) being not less than 2 μm and not greater than 4 μm. A ratio of the length (LEXT) to a sum of the length (LEXT) and a distance (LGD) is greater than 0.83 and less than 0.98.

主权项

1. A radio frequency (RF) power transistor comprising:
a semiconductor heterostructure (3) including an active layer (31) and a barrier layer (32) that is formed on said active layer (31), a gate electrode (4) disposed on said barrier layer (32) of said semiconductor heterostructure; and a drain electrode (5) including an ohmic contact (51) and a Schottky contact (52) that are disposed on said barrier layer (32) of said semiconductor heterostructure (3), said Schottky contact (52) extending from said ohmic contact (51) toward said gate electrode (4), spaced apart from said gate electrode (4) by a distance (LGD), and including a side face (522) that faces said gate electrode (4), said Schottky contact (52) having a length (LEXT) from said side face (522) to an interface (521) that is between said ohmic contact and said Schottky contact; and a source electrode (6) disposed on said barrier layer (32), spaced apart from said gate electrode (4), and including an ohmic contact (61); wherein said gate electrode (4) is disposed between said Schottky contact (52) of said drain electrode and said ohmic contact (61) of said source electrode; wherein the length (LEXT) is not less than 2 μm and not greater than 4 μm, and a ratio of the length (LEXT) to a sum of the length (LEXT) and the distance (LGD) is greater than 0.83 and less than 0.98.