发明名称 |
BIPOLAR TRANSISTOR, BAND-GAP REFERENCE CIRCUIT AND VIRTUAL GROUND REFERENCE CIRCUIT |
摘要 |
The present invention provides a bipolar transistor, a method for forming the bipolar transistor, a method for turning on the bipolar transistor, and a band-gap reference circuit, virtual ground reference circuit and double band-gap reference circuit with the bipolar transistor. The bipolar transistor includes: a Silicon-On-Insulator wafer; a base area, an emitter area and a collector area; a base area gate dielectric layer on a top silicon layer and atop the base area; a base area control-gate on the base area gate dielectric layer; an emitter electrode connected to the emitter area via a first contact; a collector electrode connected to the collector area via a second contact; and a base area control-gate electrode connected to the base area control-gate via a third contact. Processes of forming the bipolar transistor are fully compatible with traditional standard CMOS processes; and the base current to turn on the bipolar transistor is based on the GIDL current and formed by applying a voltage to the base area control-gate electrode without any need of contact to the base. |
申请公布号 |
US2016218194(A1) |
申请公布日期 |
2016.07.28 |
申请号 |
US201615088961 |
申请日期 |
2016.04.01 |
申请人 |
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION |
发明人 |
CHI MIN-HWA;CHING LIHYING;XIAO DEYUAN |
分类号 |
H01L29/66;H01L29/10;H01L29/06 |
主分类号 |
H01L29/66 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
BEIJING CN |