METAL-INSULATOR-METAL (MIM) CAPACITORS AND FORMING METHODS

摘要

The present disclosure relates a metal-insulator-metal (MIM) capacitor. In some embodiments, the MIM capacitor has a capacitor bottom metal (CBM) electrode arranged over a semiconductor substrate. The MIM capacitor has a high-k dielectric disposed over the CBM electrode and a capacitor top metal (CTM) electrode arranged over the high-k dielectric layer. The MIM capacitor has a dummy structure that is disposed vertically over the high-k dielectric layer and laterally apart from the CTM electrode. The dummy structure includes a conductive body having a same material as the CTM electrode.

主权项

1. A metal-insulator-metal (MIM) capacitor, comprising:
a capacitor bottom metal (CBM) electrode disposed over a semiconductor substrate; a high-k dielectric layer disposed over the CBM electrode; a capacitor top metal (CTM) electrode disposed over the high-k dielectric layer; and a dummy structure disposed vertically over the high-k dielectric layer and laterally apart from the CTM electrode, wherein the dummy structure comprises a conductive body having a same material as the CTM electrode.