发明名称 Source Down Semiconductor Devices and Methods of Formation Thereof
摘要 A method for forming a semiconductor device includes forming device regions in a semiconductor substrate having a first side and a second side. The device regions are formed adjacent the first side. The method further includes forming a seed layer over the first side of the semiconductor substrate, and forming a patterned resist layer over the seed layer. A contact pad is formed over the seed layer within the patterned resist layer. The method further includes removing the patterned resist layer after forming the contact pad to expose a portion of the seed layer underlying the patterned resist layer, and forming a protective layer over the exposed portion of the seed layer.
申请公布号 US2016260658(A1) 申请公布日期 2016.09.08
申请号 US201615155271 申请日期 2016.05.16
申请人 Infineon Technologies AG 发明人 Schneegans Manfred;Meiser Andreas;Mischitz Martin;Roesner Michael;Pinczolits Michael
分类号 H01L23/495;H01L23/00;H01L23/528;H01L21/48;H01L21/78 主分类号 H01L23/495
代理机构 代理人
主权项 1. A semiconductor device comprising: a chip comprising a diced semiconductor substrate,a seed layer disposed over and overlapping with an entire major surface of the diced semiconductor substrate,a patterned contact pad disposed over and covering a portion of the seed layer, anda diced carrier material disposed at sidewalls of the patterned contact pad.
地址 Neubiberg DE