发明名称 |
Source Down Semiconductor Devices and Methods of Formation Thereof |
摘要 |
A method for forming a semiconductor device includes forming device regions in a semiconductor substrate having a first side and a second side. The device regions are formed adjacent the first side. The method further includes forming a seed layer over the first side of the semiconductor substrate, and forming a patterned resist layer over the seed layer. A contact pad is formed over the seed layer within the patterned resist layer. The method further includes removing the patterned resist layer after forming the contact pad to expose a portion of the seed layer underlying the patterned resist layer, and forming a protective layer over the exposed portion of the seed layer. |
申请公布号 |
US2016260658(A1) |
申请公布日期 |
2016.09.08 |
申请号 |
US201615155271 |
申请日期 |
2016.05.16 |
申请人 |
Infineon Technologies AG |
发明人 |
Schneegans Manfred;Meiser Andreas;Mischitz Martin;Roesner Michael;Pinczolits Michael |
分类号 |
H01L23/495;H01L23/00;H01L23/528;H01L21/48;H01L21/78 |
主分类号 |
H01L23/495 |
代理机构 |
|
代理人 |
|
主权项 |
1. A semiconductor device comprising:
a chip comprising
a diced semiconductor substrate,a seed layer disposed over and overlapping with an entire major surface of the diced semiconductor substrate,a patterned contact pad disposed over and covering a portion of the seed layer, anda diced carrier material disposed at sidewalls of the patterned contact pad. |
地址 |
Neubiberg DE |