| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element which can improve breakdown voltage.SOLUTION: According to an embodiment, a semiconductor light emitting element includes a substrate, first through third semiconductor layers, a first conductive layer, and first and second insulation layers. The second semiconductor layer is provided between the first semiconductor layer and the substrate. The third semiconductor layer is provided between the first and second semiconductor layers. The first conductive layer is provided between a part of the second semiconductor layer and the substrate and electrically connected with the second semiconductor layer. The first insulation layer is provided between another part of the second semiconductor layer and the substrate and between the first conductive layer and the substrate. The second insulation layer is provided between the first insulation layer and the substrate. A first thickness of the first insulation layer at a first position which overlaps the first conductive layer is thinner than a second thickness of the first insulation layer at a second position which does not overlap the first conductive layer. An absolute value of a difference between a third thickness of the second insulation layer at the first position and a fourth thickness of the second insulation layer at the second position is smaller than an absolute value of a difference between the first and second thicknesses.SELECTED DRAWING: Figure 1 |
