Sensing field effect transistor devices and method of their manufacture

摘要

A sensing device includes a sensor die having a sensing region formed at a first surface of the sensor die. The sensing device further includes an encapsulant covering the sensing die, the encapsulant having a cavity formed therein, wherein the cavity exposes the sensing region. A sensitive membrane material is deposited within the cavity over the sensing region. A method of manufacturing sensing devices entails mounting a plurality of sensing dies to a carrier, encapsulating the dies in an encapsulant, forming cavities in the encapsulant, the cavities exposing a sensing region of each sensor die, and depositing the sensitive membrane material within each of the cavities. The encapsulating and forming operations can be performed simultaneously using a film-assisted molding (FAM) process, and the depositing operation is performed following FAM at an ambient temperature that is lower than the temperature needed to perform FAM.

主权项

1. A method of forming a sensing device comprising:
providing a sensing die having a first surface and a sensing region formed at said first surface; encapsulating said sensing die in an encapsulant, said encapsulating process being performed at a temperature in excess of one hundred fifty degrees Celsius; forming a cavity in said encapsulant, said cavity exposing said sensing region; and depositing a sensitive membrane material within said cavity over said sensing region, wherein said sensitive membrane material is susceptible to damage at said temperature in excess of one hundred fifty degrees Celsius, and said depositing operation is performed following said encapsulating operation at an ambient temperature that is less than one hundred fifty degrees Celsius.