发明名称 Method of sealing and shielding for dual pressure MEMs devices
摘要 The present disclosure relates to a MEMs substrate. In some embodiments, the MEMs substrate has a device substrate having a micro-electromechanical system (MEMs) device, and a layer of bonding material positioned over the device substrate at positions adjacent to the MEMs device. A cap substrate has a depression is disposed within a surface abutting the layer of bonding material. The depression within the cap substrate forms a chamber vertically disposed between the device substrate and the cap substrate and abutting the MEMs device. One or more pressure tuning channels are vertically disposed between the device substrate and the cap substrate and laterally extend outward from a sidewall of the chamber.
申请公布号 US9481564(B2) 申请公布日期 2016.11.01
申请号 US201514698985 申请日期 2015.04.29
申请人 Taiwan Semiconductor Manufacturing Co., Ltd. 发明人 Chang Kuei-Sung
分类号 B81B7/00;B81C1/00;B81B7/02 主分类号 B81B7/00
代理机构 Eschweiler & Associates, LLC 代理人 Eschweiler & Associates, LLC
主权项 1. A MEMs (micro-electromechanical system) substrate, comprising: a device substrate having a micro-electromechanical system (MEMs) device; a layer of bonding material positioned over the device substrate at positions adjacent to the MEMs device; a cap substrate comprising a depression disposed within a surface abutting the layer of bonding material, which forms a chamber vertically disposed between the device substrate and the cap substrate and abutting the MEMs device; and one or more pressure tuning channels vertically disposed between the device substrate and the cap substrate and laterally extending outward from a sidewall of the chamber, wherein the one or more pressure tuning channels comprise one or more openings arranged within upper horizontal surfaces of the one or more pressure tuning channels.
地址 Hsin-Chu TW