Semiconductor device including a resistor metallic layer and method of forming the same

摘要

A semiconductor device including a resistor metallic layer and method forming the same. In one embodiment, the semiconductor device includes a source region and a drain region of a semiconductor switch on a substrate. The semiconductor device also includes the resistor metallic layer over the source region and the drain region of the semiconductor switch. The resistor metallic layer includes a first resistor with a first resistor metallic strip coupled between a first cross member and a second cross member of the resistor metallic layer.

主权项

1. A semiconductor device, comprising:
a source region and a drain region of a semiconductor switch on a substrate; and a resistor metallic layer over said source region and said drain region of said semiconductor switch, said resistor metallic layer comprising a first resistor including a first resistor metallic strip coupled between a first cross member and a second cross member.