发明名称 |
LIQUID COMPOSITION FOR ETCHING OXIDES COMPRISING INDIUM, ZINC, TIN, AND OXYGEN AND ETCHING METHOD |
摘要 |
Provided is a liquid etching composition that etches an oxide comprising indium, zinc, tin and oxygen at a preferable etching rate, without the etching rate being changed much along with the dissolution of the oxide, and with no substantial generation of deposit, and corrodes wiring materials at such a low level to be ignorable. The present invention uses a liquid etching composition comprising (A) at least one selected from the group consisting of sulfuric acid, methanesulfonic acid, and a salt of any of these acids; and water; the liquid etching composition having a pH value of −1 to 3. |
申请公布号 |
US2016348001(A1) |
申请公布日期 |
2016.12.01 |
申请号 |
US201515116626 |
申请日期 |
2015.01.21 |
申请人 |
MITSUBISHI GAS CHEMICAL COMPANY, INC. |
发明人 |
SHIGETA Mari;YUBE Kunio |
分类号 |
C09K13/06;H01L33/00;H01L33/36;C09K13/04;G02F1/1343 |
主分类号 |
C09K13/06 |
代理机构 |
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代理人 |
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主权项 |
1. A liquid etching composition for etching an oxide comprising indium, zinc, tin and oxygen, the liquid etching composition comprising:
(A) at least one selected from the group consisting of sulfuric acid, methanesulfonic acid, and a salt of any of these acids; 10 to 5000 ppm by mass of (D) zinc; and water; the liquid etching composition having a pH value of −1 to 3. |
地址 |
Tokyo JP |