| 摘要 |
PURPOSE:To enable the high speed operation of a semiconductor device in a wire of the device by reducing the parasitic capacity between a semiconductor substrate and the wire. CONSTITUTION:The first and second wire layers 6, 7 are laminated via an interlayer insulating film 5 on a semiconductor substrate 4. The first layer 6 is formed narrower than the layer 7 by the width B, thereby reducing the parasitic capacity with respect to the semiconductor substrate of the entire wire formed of the first and second layers 6, 7. In order to reduce the width of the first layer 6 as compared with the second layer 7, the layer 6 is formed of polycrystalline silicon, and the second layer 7 is formed of aluminum. Then, the layer 7 is etched, the layer 6 is then overetched by wet etching. |
