| 摘要 |
PURPOSE:To increase the resolving power of the solid state pickup device, and to relax the strain of an electric field around a light receiving diode by coating a field oxide film between the light receiving diode and a thin oxide film around the light receiving diode with polycrystalline silicon. CONSTITUTION:An N layer 24 is formed being adjoined to a P<+> channel stopper diffusion layer 22 shaped onto the P type substrate 21. The thin oxide film 26 is formed to the fringe in an upper surface of the layer 24 and the fringe on the P<+> channel stopper diffusion layer 22. The polycrystalline Si 27 is shaped onto the thin oxide film 26 and the field oxide film 23. Accordingly, unnecessary incident beams are limited, the revolving power is improved, the strain of the electric field around the light receiving diode is relaxed, and the generation of dark currents is inhibited. |
