发明名称 DOUBLE FACE LAP GRINDING METHOD USED WITH ELECTROLYTIC DRESSING
摘要 PURPOSE:To simplify a working process and to improve an integrated productivity by employing an electrolytic inprocess dressing grind method in the working process of a silicon wafer. CONSTITUTION:A conductive lower side grindwheel 11 and upper side grindwheel 12 rotating horizontally around a rotating shaft are equipped, and the grinding face of each grindwheel is provided in opposition so as to be superposed with the rotating shafts of the lower side grindwheel 11 and upper side grindwheel 12 being slided and an electrode 16 approached to the grinding face of each grindwheel is arranged at the outside of the superposed part. A conductive liquid is respectively fed between this grindwheel and electrode, current is respectively fed between the grindwheel and electrode, a work piece 14 is pinched by the grindwheel provided in opposition with its holding by a holder 15 arranged in the gap of the superposed part, consequently the both faces of the work piece 14 is subjected to grinding while executing the electrolytic dressing of the grinding face of each grindwheel.
申请公布号 JPH04275874(A) 申请公布日期 1992.10.01
申请号 JP19910123199 申请日期 1991.03.04
申请人 RIKAGAKU KENKYUSHO 发明人 OMORI HITOSHI;TAKAHASHI ICHIRO;NAKAGAWA TAKEO
分类号 B24B53/00;B24B53/017;H01L21/304;H01L21/306;H01L21/3063 主分类号 B24B53/00
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