| 摘要 |
PURPOSE:To obtain a production device for semiconductor device of high reliability for producing a silicon oxide film by a vacuum CVD method and to provide a cleaning method therefor. CONSTITUTION:Gaseous anhydrous HF, gaseous ClF3, and gaseous nitrogen which is a carrier gas are introduced into a quartz pipe 3 in the production device for semiconductor device and a vacuum discharge pipe 13 at 300-700Torr pressure and the deposit of reactive gas stuck to these inside walls is removed. The pressure can be easily adjusted by using an aspirator 26 which is a pressure decrease means. Thus, the deposit of the reactive gas stuck to the inside walls of the quartz pipe 3 and the vacuum discharge pipe 13 is removed and the particles are reduced, thus the semiconductor device of high reliability is produced.
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