发明名称 |
Polysilicon field ring structure for power ic |
摘要 |
A polysilicon field ring structure is used to eliminate any type of unwanted surface current leakage in an integrated power chip having high voltage and low voltage areas and enclosed in a plastic housing. All P-type diffusions not biased to the ground potential are surrounded by rings biased to the supply potential, and all N-type diffusions not biased to the supply potential are surrounded by rings biased to the ground potential. |
申请公布号 |
GB2291257(B) |
申请公布日期 |
1999.02.17 |
申请号 |
GB19950009964 |
申请日期 |
1995.05.17 |
申请人 |
* INTERNATIONAL RECTIFIER CORPORATION |
发明人 |
CHONGWOOK CHRIS * CHOI;NIRAJ * RANJAN |
分类号 |
H01L27/04;H01L21/3205;H01L21/76;H01L21/822;H01L21/8234;H01L21/8238;H01L23/52;H01L27/088;H01L27/092;H01L29/06;H01L29/40;H01L29/78;(IPC1-7):H01L29/06 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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