| 摘要 |
A semiconductor device capacitor fabrication method comprises forming a first insulation film on a substrate and an undoped semiconductor layer on the first insulation film, patterning the undoped semiconductor layer to a desired shape, forming a second insulation film on the undoped semiconductor layer, forming contact holes by selectively etching the second insulation film, the undoped semiconductor layer and the first insulation respectively for exposing a portion of the undoped semiconductor layer therethrough, forming a first electrode film on the bottom of each of the contact holes, the undoped semiconductor layer and side walls of the second insulation film, removing the second insulation film, and forming a dielectric thin film and a second electrode film sequentially on the first electrode film. The fabrication method realizes a high dielectric constant in a large scale integration semiconductor memory device by employing new materials for a dielectric thin film and an electrode.
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