METHOD AND SYSTEM FOR IMPROVING A TRANSISTOR MODEL

摘要

The present invention relates to an improved system for simulating bipolar transistors with a variation in Early voltage as a function of collector/emitter bias voltage. The simulation is based upon a standard Gummel-Poon model and is improved by an Early voltage extension, where the constant Early voltage is replaced by an Early voltage that is divided into several regions. The Early voltage is adjusted to fit the actual variations of the measured Early voltage characteristics of a bipolar transistor. The Early voltage within each region is used for calculating the bipolar transistors base charge (qb) which then is used to simulate the performance of the bipolar transistor. The regions may be linked together by choice of boundary conditions.