发明名称 METHOD OF PRODUCING SEMICONDUCTOR WAFER
摘要 <p>The present invention provides a method of producing a semiconductor wafer, which can prevent the breakage of a wafer, and also can reduce the working time in a series of operations attended by back surface grinding of the semiconductor wafer. Disclosed is a method of producing a semiconductor wafer wherein an adhesive tape is applied on the surface of the semiconductor wafer and, after grinding the back surface of the semiconductor wafer using a grinding machine, the adhesive tape is peeled off, said process comprises using an adhesive tape having heat shrinkability as the adhesive tape, grinding the back surface of the semiconductor wafer and heating the adhesive tape in the grinding machine, thereby peeling off the adhesive tape from the surface of the semiconductor wafer.</p>
申请公布号 EP0967634(A1) 申请公布日期 1999.12.29
申请号 EP19980953073 申请日期 1998.11.17
申请人 MITSUI CHEMICALS, INC. 发明人 KATAOKA, MAKOTO;FUJII, YASUHISA;HIRAI, KENTARO;FUKUMOTO, HIDEKI
分类号 H01L21/304;B24B37/04;B32B7/06;C09J7/02;H01L21/68;(IPC1-7):H01L21/304 主分类号 H01L21/304
代理机构 代理人
主权项
地址
您可能感兴趣的专利