| 发明名称 |
Method for elimination of TEOS/ozone silicon oxide surface sensitivity |
| 摘要 |
A method and apparatus for reducing surface sensitivity of a TEOS/O3 SACVD silicon oxide layer, formed over a substrate, that deposits a ramp layer while ramping pressure to a target deposition pressure and deposits an SACVD layer over the ramp layer. In one embodiment, the flow of ozone is stopped during the pressure ramp-up to control the thickness of the ramp layer.
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| 申请公布号 |
US6149974(A) |
申请公布日期 |
2000.11.21 |
| 申请号 |
US19970851830 |
申请日期 |
1997.05.05 |
| 申请人 |
APPLIED MATERIALS, INC. |
发明人 |
NGUYEN, BANG C.;VANKATARANAN, SHANKAR;LIAO, RUBY;LEE, PETER W. |
| 分类号 |
H01L21/31;C23C16/02;C23C16/40;C23C16/44;C23C16/455;H01L21/316;(IPC1-7):C23C16/40 |
主分类号 |
H01L21/31 |
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