METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING ANTI-REFLECTIVE COATING

摘要

PURPOSE: A method for manufacturing a semiconductor device using an anti-reflective coating(ARC) is provided to effectively prevent the ARC from being left on a polysilicon layer for forming a gate electrode and to control an unnecessary oxide layer grown on the polysilicon layer, by eliminating the ARC formed in a photolithography process while using mixed liquid of a fluoride and an oxidizing agent. CONSTITUTION: The ARC is used to pattern a predetermined layer by a photolithography process. The ARC is eliminated by using the mixed liquid of an HF solution and an H2O2 solution such that the volume ratio of the HF solution of 49 percent in purity to the H2O2 solution of 30 percent in purity is from 14:800 to 14:1400.