| 摘要 |
PROBLEM TO BE SOLVED: To improve the reliability of a trench lateral power MOSFET. SOLUTION: A trench 5 is formed on the surface layer of a semiconductor substrate 1. The trench 5 is formed, by dividing the surface layer of the semiconductor substrate 1 into a first mesa region 41 and a second mesa area 42, and alternately arranging the first and second mesa areas 41 and 42. The first and second mesa region 41 and 42 lead out source current and drain current, respectively. The second mesa region 42 has a larger depth from the semiconductor substrate 1 than the first mesa region 41. COPYRIGHT: (C)2008,JPO&INPIT
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