发明名称 |
PLASMA CVD APPARATUS, PROGRAM FOR CONTROLLING PLASMA CVD APPARATUS, AND METHOD FOR CLEANING PLASMA CVD APPARATUS |
摘要 |
PROBLEM TO BE SOLVED: To provide a plasma CVD apparatus which can effectively clean a reaction chamber with plasma; a program for controlling the plasma CVD apparatus; and a method for cleaning the plasma CVD apparatus. SOLUTION: A high-frequency power source 104 of the plasma CVD apparatus has an output impedance of 50Ω. A composition of a substance converted into plasma changes as a cleaning operation progresses, and impedance in the reaction chamber changes. A second detecting part 241 detects a change of voltage and an electric current to detect the impedance. An adjusting part 242 controls the capacitance of a second variable-capacitance condenser 225 by rotating a second motor 234 so that the impedance matches with the output impedance. COPYRIGHT: (C)2008,JPO&INPIT
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申请公布号 |
JP2008095150(A) |
申请公布日期 |
2008.04.24 |
申请号 |
JP20060278335 |
申请日期 |
2006.10.12 |
申请人 |
KOTEC:KK |
发明人 |
TAMOGAMI JUNICHI;KOBAYASHI SEIJI;KANATSU TAMIO |
分类号 |
C23C16/44;H01L21/3065;H01L21/31 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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