PROCESS FOR CONTROLLING DOPANT DIFFUSION IN SEMICONDUCTOR LAYER AND SEMICONDUCTOR DEVICE FORMED THEREBY

摘要

PROBLEM TO BE SOLVED: To provide a process for controlling the diffusion of dopant in a semiconductor layer at the levels of impurity concentration required, and also to provide a semiconductor layer formed thereby. SOLUTION: A process for controlling the diffusion of dopant in a semiconductor layer includes steps of: (a) introducing electrically inactive impurity in a crystal growth flux in order to control a diffusion-suppressing amount; (b) depositing a crystalline first semiconductor layer on a crystalline semiconductor substrate by at least one crystal growth technique using the crystal growth flux; and (c) forming a second semiconductor layer on the first semiconductor layer, wherein the second semiconductor layer contains electrically active dopant. COPYRIGHT: (C)2008,JPO&INPIT