| 摘要 |
A method for manufacturing an IPS(In-Plane Switching) mode LCD(Liquid Crystal Display) is provided to decrease the number of masks used in manufacturing thin film transistors, thereby reducing a manufacturing process and a manufacturing cost. A first substrate, which is divided into a pixel part, a data pad part, and a gate pad part, is prepared. A gate electrode(121) and a gate line(116) are formed in the pixel part of the first substrate. A gate-insulating layer is formed above the first substrate. An active pattern and source/drain electrodes(122,123) are formed in the pixel part of the first substrate. An n+-amorphous silicon thin film pattern is formed on the active pattern while the n+-amorphous silicon thin film pattern has the same shape as the active pattern. A data line(117) is formed in the pixel part of the first substrate. The data line crosses the gate line to define a pixel region. A pixel electrode(118) is formed in the pixel region while the pixel electrode is directly contacted with a portion of the drain electrode. The n+-amorphous silicon thin film pattern is partially removed to form an ohmic contact layer. A passivation layer is formed above the first substrate. A common electrode with plural slits(108s) is formed in the pixel part of the first substrate. A binding process of the first substrate and a second substrate is performed. |
