发明名称 |
FAN -OUT WAFER LEVEL PACKAGING STRUCTURE |
摘要 |
Described herein is a semiconductor device and the manufacturing method thereof, wherein the semiconductor device includes a first die including a first pad and a first passivation layer; a second die including a second pad and a second passivation layer; an encapsulant surrounding the first die and the second die and comprising a first surface; a dielectric layer covering at least a portion of the first passivation layer and at least a portion of the second passivation layer, and further covering the encapsulant between the first die and the second die, wherein the dielectric layer includes: a second surface adjacent to the first passivation layer, the second passivation layer and the encapsulant; and a third surface opposite to the second surface; and a redistribution layer electrically connecting to the first pad and the second pad and disposed above the third surface of the dielectric layer. |
申请公布号 |
US2016218063(A1) |
申请公布日期 |
2016.07.28 |
申请号 |
US201514605779 |
申请日期 |
2015.01.26 |
申请人 |
Advanced Semiconductor Engineering, Inc. |
发明人 |
TSAI Chung-Hsuan;HSIEH Chuehan |
分类号 |
H01L23/538;H01L23/00;H01L25/065;H01L23/31 |
主分类号 |
H01L23/538 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device, comprising:
a first die comprising a first pad and a first passivation layer; a second die comprising a second pad and a second passivation layer, wherein the first die has a first sidewall and the second die has a second sidewall; an encapsulant surrounding the first die and the second die and comprising a first surface; a dielectric layer covering at least a portion of the first passivation layer and at least a portion of the second passivation layer, and further covering the encapsulant between the first die and the second die, wherein the dielectric layer comprises:
a second surface adjacent to the first passivation layer, the second passivation layer and the encapsulant; anda third surface opposite to the second surface; and a redistribution layer electrically connecting to the first pad and the second pad and disposed above the third surface of the dielectric layer; wherein a first roughness of the first surface of the encapsulant is greater than a second roughness of the third surface of the dielectric layer. |
地址 |
Kaohsiung TW |