| 发明名称 |
MEMORY DEVICE |
| 摘要 |
A memory device according to an embodiment includes an insulating layer containing silicon, an interface layer provided on the insulating layer and containing a chalcogenide compound of a transition metal, and a conductive layer provided on the interface layer, containing antimony or bismuth, and having a superlattice structure. |
| 申请公布号 |
US2016233421(A1) |
申请公布日期 |
2016.08.11 |
| 申请号 |
US201514793891 |
申请日期 |
2015.07.08 |
| 申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
SUZUKI Kunifumi;TOMINAGA Junji |
| 分类号 |
H01L45/00;H01L27/24 |
主分类号 |
H01L45/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A memory device comprising:
an insulating layer containing silicon; an interface layer provided on the insulating layer, and the interface layer containing a chalcogenide compound of a transition metal; and a conductive layer provided on the interface layer, the conductive layer containing antimony or bismuth, and the conductive layer having a superlattice structure. |
| 地址 |
Minato-ku JP |
