| 发明名称 |
SEMICONDUCTOR DEVICE AND PREPARATION METHOD THEREFOR |
| 摘要 |
A semiconductor device includes a substrate (110); a buried layer (120) formed on the substrate (110), a diffusion layer (130) formed on the buried layer (120), wherein the diffusion layer (130) includes a first diffusion region (132) and a second diffusion region (134), and an impurity type of the second diffusion region (134) is opposite to an impurity type of the first diffusion region (132); the diffusion layer (134) further comprises a plurality of third diffusion regions (136) formed in the second diffusion region, wherein an impurity type of the third diffusion region (136) is opposite to the impurity type of the second diffusion region (134); and a gate (144) formed on the diffusion layer (130). |
| 申请公布号 |
US2016233216(A1) |
申请公布日期 |
2016.08.11 |
| 申请号 |
US201415023049 |
申请日期 |
2014.12.03 |
| 申请人 |
CSMC TECHNOLOGIES FAB1 CO., LTD. |
发明人 |
ZHANG Guangsheng;ZHANG Sen |
| 分类号 |
H01L27/088;H01L21/8236 |
主分类号 |
H01L27/088 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a substrate; a buried layer formed on the substrate; a diffusion layer formed on the buried layer, wherein the diffusion layer comprises a first diffusion region and a second diffusion region, and an impurity type of the second diffusion region is opposite to an impurity type of the first diffusion region; the diffusion layer further comprises a plurality of third diffusion regions formed in the second diffusion region, wherein an impurity type of the third diffusion region is opposite to the impurity type of the second diffusion region; and a gate formed on the diffusion layer. |
| 地址 |
Jiangsu CN |
