发明名称 PLASMA PROCESSING APPARATUS
摘要 PROBLEM TO BE SOLVED: To perform a uniform plasma processing for a sample by adjusting an induced magnetic field distribution on an ICP plasma processing apparatus to correct a plasma distribution on the sample.SOLUTION: The ICP plasma processing apparatus is so configured that a conductor is disposed between an induction coil and a dielectric window, where the juxtaposed conductor is disposed along the induction coil and is located on at least a part of a circumferential direction of the induction coil. The conductor is disposed at a location where induced magnetic field strength from the induction coil is lowered, and at a position of satisfying relationship of Lp≥Lr, where Lr is a minimum distance from the induction coil to a surface of the conductor, and Lp is a minimum distance from the induction coil to plasma immediately below the dielectric window.SELECTED DRAWING: Figure 4
申请公布号 JP2016167602(A) 申请公布日期 2016.09.15
申请号 JP20160057822 申请日期 2016.03.23
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 SAKKA YUSAKU;NISHIO RYOJI;KAWAGUCHI TADAYOSHI
分类号 H01L21/3065;C23C16/505;H05H1/46 主分类号 H01L21/3065
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