发明名称 |
Low-temperature formation of thin-film structures. |
摘要 |
Methods for low-temperature formation of one or more thin-film semiconductor structures on a substrate are described wherein the method comprises the steps of: forming a (poly)silane layer over a substrate; transforming one or more parts of said (poly)silane layer in one or more thin-film solid-state semiconductor structures by exposing said one or more parts with light from an UV source. |
申请公布号 |
NL2013715(B1) |
申请公布日期 |
2016.10.04 |
申请号 |
NL20142013715 |
申请日期 |
2014.10.31 |
申请人 |
TECHNISCHE UNIVERSITEIT DELFT |
发明人 |
ISHIHARA RYOICHI;MICHIEL VAN DER ZWAN;MIKI TRIFUNOVIC |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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