| 发明名称 |
EXTREME ULTRAVIOLET LITHOGRAPHY PROCESS AND MASK |
| 摘要 |
An extreme ultraviolet lithography (EUVL) system is disclosed. The system includes an extreme ultraviolet (EUV) mask with three states having respective reflection coefficient is r1, r2 and r3, wherein r3 is a pre-specified value that is a function of r1 and r2. The system also includes a nearly on-axis illumination (ONI) with partial coherence a less than 0.3 to expose the EUV mask to produce diffracted light and non-diffracted light. The system further includes a projection optics box (PUB) to remove a portion of the non-diffracted light and to collect and direct the diffracted light and the remaining non-diffracted light to expose a target. |
| 申请公布号 |
US2016306272(A1) |
申请公布日期 |
2016.10.20 |
| 申请号 |
US201615194072 |
申请日期 |
2016.06.27 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
Lu Yen-Cheng;Chen Jeng-Horng;Yu Shinn-Sheng;Yen Anthony |
| 分类号 |
G03F1/24;G03F7/20 |
主分类号 |
G03F1/24 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An extreme ultraviolet lithography (EUVL) system, comprising:
an extreme ultraviolet (EUV) mask with three states having reflection coefficients r1, r2, and r3, respectively, wherein r3 is a pre-specified value that is a function of r1 and r2; an on-axis illumination (ONI) with partial coherence σ less than 0.3 to expose the EUV mask to produce diffracted light and non-diffracted light; and a projection optics box (POB) to remove a portion of the non-diffracted light and to collect and direct the diffracted light and the remaining non-diffracted light to expose a target. |
| 地址 |
Hsin-Chu TW |
