| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and manufacturing method therefor, capable of restraining warpage of a semiconductor device.SOLUTION: The semiconductor device includes: a semiconductor substrate; an insulation layer; and a buried region. The insulation layer is provided on the semiconductor substrate. The buried region is provided at the insulation layer and has a stress in the action direction opposite to that of the insulation layer. The insulation layer is provided with a wiring therein. The buried region is any region other than a formation region of the wiring in the insulation layer and is provided at the same layer as the wiring layer in the insulation layer.SELECTED DRAWING: Figure 1 |
