| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate temperature adjustment mechanism for plasma processing apparatus, capable of preventing discharge in a heating medium as much as possible, while ensuring sufficient heat transfer effect.SOLUTION: A reverse path 30 partially having a flow path 33 in a reverse direction is provided in a heat transfer medium flow path 25 between a substrate mounting table placed in the plasma processing chamber, and having a heat transfer medium holding space, and a heat transfer medium source for supplying a heat transfer medium to the heat transfer medium holding space. Normally, even if discharge takes place in the heat transfer medium between a heat transfer medium source of the ground potential and the substrate mounting table applied with a high voltage for plasma processing, the charges generated by the discharge in the heat transfer medium must flow while resisting against the reverse potential difference in the flow path 33 in a reverse direction, and thereby it is difficult to continue discharge in the heat transfer medium.SELECTED DRAWING: Figure 2 |
